Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 650V 29A TO-220AB
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
156 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
4V @ 3.3mA
Chaje Gate (Qg) (Max) @ Vgs :
61nC @ 18V
Antre kapasite (Ciss) (Max) @ Vds :
1200pF @ 500V
Disipasyon Pouvwa (Max) :
165W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB