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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDH3632

ON Semiconductor - FDH3632

KEY Part #: K6416085

FDH3632 Pricing (USD) [15904PC Stock]

  • 1 pcs$2.54284
  • 10 pcs$2.27137
  • 100 pcs$1.86235
  • 500 pcs$1.50804
  • 1,000 pcs$1.27184
Nimewo Pati:
FDH3632
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 80A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDH3632 electronic components. FDH3632 can be shipped within 24 hours after order. If you have any demands for FDH3632, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDH3632 Atribi pwodwi yo

Nimewo Pati : FDH3632
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 80A TO-247
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 310W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3

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