TK040N65Z,S1F Pricing (USD) [8501PC Stock]
- 1 pcs$4.84770
- Nimewo Pati:
- TK040N65Z,S1F
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- PB-F POWER MOSFET TRANSISTOR TO-.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK040N65Z,S1F electronic components. TK040N65Z,S1F can be shipped within 24 hours after order. If you have any demands for TK040N65Z,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK040N65Z,S1F Atribi pwodwi yo
Nimewo Pati :
TK040N65Z,S1F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
PB-F POWER MOSFET TRANSISTOR TO-
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
57A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 28.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 2.85mA
Chaje Gate (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6250pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360W (Tc)
Operating Tanperati :
150°C
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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