IXFN200N10P Pricing (USD) [4825PC Stock]
- 1 pcs$9.47483
- 10 pcs$9.42769
- Nimewo Pati:
- IXFN200N10P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 200A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Tiristors - SCR, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN200N10P electronic components. IXFN200N10P can be shipped within 24 hours after order. If you have any demands for IXFN200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN200N10P Atribi pwodwi yo
Nimewo Pati :
IXFN200N10P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 200A SOT-227B
Seri :
Polar™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
680W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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