STMicroelectronics - STGB20NB37LZ

KEY Part #: K6424150

[9408PC Stock]


    Nimewo Pati:
    STGB20NB37LZ
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    IGBT 425V 40A 200W D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STGB20NB37LZ electronic components. STGB20NB37LZ can be shipped within 24 hours after order. If you have any demands for STGB20NB37LZ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STGB20NB37LZ Atribi pwodwi yo

    Nimewo Pati : STGB20NB37LZ
    Manifakti : STMicroelectronics
    Deskripsyon : IGBT 425V 40A 200W D2PAK
    Seri : PowerMESH™
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 425V
    Kouran - Pèseptè (Ic) (Max) : 40A
    Kouran - Pèseptè batman (Icm) : 80A
    Vce (sou) (Max) @ Vge, Ic : 2V @ 4.5V, 20A
    Pouvwa - Max : 200W
    Oblije chanje enèji : 11.8mJ (off)
    Kalite Antre : Standard
    Gate chaje : 51nC
    Td (on / off) @ 25 ° C : 2.3µs/2µs
    Kondisyon egzamen an : 250V, 20A, 1 kOhm, 4.5V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : D2PAK