[9445PC Stock]
- Nimewo Pati:
- IXGC12N60CD1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 15A 85W ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXGC12N60CD1 electronic components. IXGC12N60CD1 can be shipped within 24 hours after order. If you have any demands for IXGC12N60CD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGC12N60CD1 Atribi pwodwi yo
Nimewo Pati :
IXGC12N60CD1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 15A 85W ISOPLUS220
Seri :
HiPerFAST™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
15A
Kouran - Pèseptè batman (Icm) :
48A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Pouvwa - Max :
85W
Oblije chanje enèji :
90µJ (off)
Kalite Antre :
Standard
Gate chaje :
32nC
Td (on / off) @ 25 ° C :
20ns/60ns
Kondisyon egzamen an :
480V, 12A, 18 Ohm, 15V
Ranvèse Tan Reverse (trr) :
35ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
ISOPLUS220™
Pake Aparèy Founisè :
ISOPLUS220™
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