Diodes Incorporated - DMT6004SCT

KEY Part #: K6393792

DMT6004SCT Pricing (USD) [42509PC Stock]

  • 1 pcs$0.86965
  • 50 pcs$0.70191
  • 100 pcs$0.63175
  • 500 pcs$0.49136
  • 1,000 pcs$0.40712

Nimewo Pati:
DMT6004SCT
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 100A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMT6004SCT electronic components. DMT6004SCT can be shipped within 24 hours after order. If you have any demands for DMT6004SCT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT6004SCT Atribi pwodwi yo

Nimewo Pati : DMT6004SCT
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 100A TO220-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.65 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 95.4nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4556pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.3W (Ta), 113W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3