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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCMT125N65S3

ON Semiconductor - FCMT125N65S3

KEY Part #: K6397446

FCMT125N65S3 Pricing (USD) [31180PC Stock]

  • 1 pcs$1.32179
Nimewo Pati:
FCMT125N65S3
Manifakti:
ON Semiconductor
Detaye deskripsyon:
SF3 650V 125MOHM MOSFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCMT125N65S3 electronic components. FCMT125N65S3 can be shipped within 24 hours after order. If you have any demands for FCMT125N65S3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCMT125N65S3 Atribi pwodwi yo

Nimewo Pati : FCMT125N65S3
Manifakti : ON Semiconductor
Deskripsyon : SF3 650V 125MOHM MOSFET
Seri : SuperFET® III
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 125 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 590µA
Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1920pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 181W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 4-PQFN (8x8)
Pake / Ka : 4-PowerTSFN

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