Infineon Technologies - BSS83PL6327HTSA1

KEY Part #: K6406839

[1181PC Stock]


    Nimewo Pati:
    BSS83PL6327HTSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 60V 330MA SOT-23.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSS83PL6327HTSA1 electronic components. BSS83PL6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSS83PL6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSS83PL6327HTSA1 Atribi pwodwi yo

    Nimewo Pati : BSS83PL6327HTSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 60V 330MA SOT-23
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 330mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 2 Ohm @ 330mA, 10V
    Vgs (th) (Max) @ Id : 2V @ 80µA
    Chaje Gate (Qg) (Max) @ Vgs : 3.57nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 78pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 360mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-3
    Pake / Ka : TO-236-3, SC-59, SOT-23-3