TSM60NB1R4CH C5G Pricing (USD) [103911PC Stock]
- 1 pcs$0.37629
- Nimewo Pati:
- TSM60NB1R4CH C5G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 3A TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - IGBTs - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM60NB1R4CH C5G electronic components. TSM60NB1R4CH C5G can be shipped within 24 hours after order. If you have any demands for TSM60NB1R4CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB1R4CH C5G Atribi pwodwi yo
Nimewo Pati :
TSM60NB1R4CH C5G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CHANNEL 600V 3A TO251
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.12nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
257.3pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
28.4W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251 (IPAK)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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