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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDC021N30

ON Semiconductor - FDC021N30

KEY Part #: K6397425

FDC021N30 Pricing (USD) [795181PC Stock]

  • 1 pcs$0.04651
  • 6,000 pcs$0.04262
Nimewo Pati:
FDC021N30
Manifakti:
ON Semiconductor
Detaye deskripsyon:
PT8 N 30V/20V MOSFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDC021N30 electronic components. FDC021N30 can be shipped within 24 hours after order. If you have any demands for FDC021N30, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC021N30 Atribi pwodwi yo

Nimewo Pati : FDC021N30
Manifakti : ON Semiconductor
Deskripsyon : PT8 N 30V/20V MOSFET
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 26 mOhm @ 6.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 710pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SuperSOT™-6
Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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