Taiwan Semiconductor Corporation - TSM9ND50CI

KEY Part #: K6395106

TSM9ND50CI Pricing (USD) [57375PC Stock]

  • 1 pcs$0.68150

Nimewo Pati:
TSM9ND50CI
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
500V 9A 0.9O SINGLE N-CHANNEL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - SCR and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM9ND50CI Atribi pwodwi yo

Nimewo Pati : TSM9ND50CI
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : 500V 9A 0.9O SINGLE N-CHANNEL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 2.3A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 24.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1116pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 50W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ITO-220
Pake / Ka : TO-220-3 Full Pack, Isolated Tab