Nimewo Pati :
GA16JT17-247
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
TRANS SJT 1700V 16A TO-247AB
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc) (90°C)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
110 mOhm @ 16A
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
282W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AB