IXTR210P10T Pricing (USD) [4795PC Stock]
- 1 pcs$9.98701
- 30 pcs$9.93732
- Nimewo Pati:
- IXTR210P10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 158A ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTR210P10T electronic components. IXTR210P10T can be shipped within 24 hours after order. If you have any demands for IXTR210P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTR210P10T Atribi pwodwi yo
Nimewo Pati :
IXTR210P10T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 158A ISOPLUS247
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
195A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
740nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
69500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
595W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS247™
Pake / Ka :
TO-247-3
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