CSD25304W1015 Pricing (USD) [479105PC Stock]
- 1 pcs$0.07720
- 3,000 pcs$0.06755
- Nimewo Pati:
- CSD25304W1015
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET P-CH 20V 3A 6DSBGA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD25304W1015 electronic components. CSD25304W1015 can be shipped within 24 hours after order. If you have any demands for CSD25304W1015, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25304W1015 Atribi pwodwi yo
Nimewo Pati :
CSD25304W1015
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET P-CH 20V 3A 6DSBGA
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
32.5 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.15V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
595pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
750mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-DSBGA
Pake / Ka :
6-UFBGA, DSBGA
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