Texas Instruments - CSD25304W1015

KEY Part #: K6395409

CSD25304W1015 Pricing (USD) [479105PC Stock]

  • 1 pcs$0.07720
  • 3,000 pcs$0.06755

Nimewo Pati:
CSD25304W1015
Manifakti:
Texas Instruments
Detaye deskripsyon:
MOSFET P-CH 20V 3A 6DSBGA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
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Avantaj konpetitif:
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CSD25304W1015 Atribi pwodwi yo

Nimewo Pati : CSD25304W1015
Manifakti : Texas Instruments
Deskripsyon : MOSFET P-CH 20V 3A 6DSBGA
Seri : NexFET™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 32.5 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1.15V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.4nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 595pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 750mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-DSBGA
Pake / Ka : 6-UFBGA, DSBGA