Nimewo Pati :
RGT16NS65DGTL
Manifakti :
Rohm Semiconductor
Deskripsyon :
IGBT 650V 16A 94W TO-263S
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
16A
Kouran - Pèseptè batman (Icm) :
24A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 8A
Td (on / off) @ 25 ° C :
13ns/33ns
Kondisyon egzamen an :
400V, 8A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
42ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
LPDS (TO-263S)