STGB3NC120HDT4 Pricing (USD) [42679PC Stock]
- 1 pcs$0.91614
- 1,000 pcs$0.81128
- 2,000 pcs$0.77265
- Nimewo Pati:
- STGB3NC120HDT4
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 1200V 14A 75W D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGB3NC120HDT4 electronic components. STGB3NC120HDT4 can be shipped within 24 hours after order. If you have any demands for STGB3NC120HDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGB3NC120HDT4 Atribi pwodwi yo
Nimewo Pati :
STGB3NC120HDT4
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 1200V 14A 75W D2PAK
Seri :
PowerMESH™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
14A
Kouran - Pèseptè batman (Icm) :
20A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Pouvwa - Max :
75W
Oblije chanje enèji :
236µJ (on), 290µJ (off)
Kalite Antre :
Standard
Gate chaje :
24nC
Td (on / off) @ 25 ° C :
15ns/118ns
Kondisyon egzamen an :
800V, 3A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
51ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
D²PAK
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