TK1K9A60F,S4X Pricing (USD) [102769PC Stock]
- 1 pcs$0.38047
- Nimewo Pati:
- TK1K9A60F,S4X
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- PB-F POWER MOSFET TRANSISTOR TO-.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK1K9A60F,S4X electronic components. TK1K9A60F,S4X can be shipped within 24 hours after order. If you have any demands for TK1K9A60F,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK1K9A60F,S4X Atribi pwodwi yo
Nimewo Pati :
TK1K9A60F,S4X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
PB-F POWER MOSFET TRANSISTOR TO-
Seri :
U-MOSIX
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.9 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 400µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
490pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
150°C
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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