[4004PC Stock]
- Nimewo Pati:
- IRFHM792TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 2.3A 8PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM792TR2PBF electronic components. IRFHM792TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM792TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM792TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFHM792TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 100V 2.3A 8PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A
RD sou (Max) @ Id, Vgs :
195 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs :
6.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
251pF @ 25V
Pouvwa - Max :
2.3W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
8-PQFN (3.3x3.3), Power33
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