[12700PC Stock]
- Nimewo Pati:
- IRF640NL
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 18A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF640NL electronic components. IRF640NL can be shipped within 24 hours after order. If you have any demands for IRF640NL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF640NL Atribi pwodwi yo
Nimewo Pati :
IRF640NL
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 18A TO-262
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
150 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
67nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1160pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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