Toshiba Semiconductor and Storage - TPCP8J01(TE85L,F,M

KEY Part #: K6421007

TPCP8J01(TE85L,F,M Pricing (USD) [322487PC Stock]

  • 1 pcs$0.11469

Nimewo Pati:
TPCP8J01(TE85L,F,M
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
X35 PB-FREE POWER MOSFET TRANSIS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPCP8J01(TE85L,F,M electronic components. TPCP8J01(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCP8J01(TE85L,F,M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCP8J01(TE85L,F,M Atribi pwodwi yo

Nimewo Pati : TPCP8J01(TE85L,F,M
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : X35 PB-FREE POWER MOSFET TRANSIS
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 32V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 35 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1760pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.14W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PS-8
Pake / Ka : 8-SMD, Flat Lead