IRLMS2002TRPBF Pricing (USD) [387540PC Stock]
- 1 pcs$0.09840
- 3,000 pcs$0.09791
- Nimewo Pati:
- IRLMS2002TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 6.5A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLMS2002TRPBF electronic components. IRLMS2002TRPBF can be shipped within 24 hours after order. If you have any demands for IRLMS2002TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLMS2002TRPBF Atribi pwodwi yo
Nimewo Pati :
IRLMS2002TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 6.5A 6-TSOP
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
1310pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro6™(SOT23-6)
Pake / Ka :
SOT-23-6
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