Vishay Siliconix - IRFR9210TRPBF

KEY Part #: K6393106

IRFR9210TRPBF Pricing (USD) [185930PC Stock]

  • 1 pcs$0.19893
  • 2,000 pcs$0.16810

Nimewo Pati:
IRFR9210TRPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 200V 1.9A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFR9210TRPBF electronic components. IRFR9210TRPBF can be shipped within 24 hours after order. If you have any demands for IRFR9210TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR9210TRPBF Atribi pwodwi yo

Nimewo Pati : IRFR9210TRPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 200V 1.9A DPAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 170pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63