Nimewo Pati :
IRFR9210TRPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 200V 1.9A DPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
170pF @ 25V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63