Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 650V 120A 306W TO-3PN
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
120A
Kouran - Pèseptè batman (Icm) :
180A
Vce (sou) (Max) @ Vge, Ic :
2.3V @ 15V, 60A
Oblije chanje enèji :
2.46mJ (on), 520µJ (off)
Td (on / off) @ 25 ° C :
25.6ns/71ns
Kondisyon egzamen an :
400V, 60A, 6 Ohm, 15V
Ranvèse Tan Reverse (trr) :
110ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3PN