Nimewo Pati :
FGH50T65SQD-F155
Manifakti :
ON Semiconductor
Deskripsyon :
650V FS4 TRENCH IGBT
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
100A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 50A
Oblije chanje enèji :
180µJ (on), 45µJ (off)
Td (on / off) @ 25 ° C :
22ns/105ns
Kondisyon egzamen an :
400V, 12.5A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) :
31ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3