STMicroelectronics - STGB19NC60KT4

KEY Part #: K6423093

STGB19NC60KT4 Pricing (USD) [60589PC Stock]

  • 1 pcs$0.64856
  • 1,000 pcs$0.64534

Nimewo Pati:
STGB19NC60KT4
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 600V 35A 125W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGB19NC60KT4 electronic components. STGB19NC60KT4 can be shipped within 24 hours after order. If you have any demands for STGB19NC60KT4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB19NC60KT4 Atribi pwodwi yo

Nimewo Pati : STGB19NC60KT4
Manifakti : STMicroelectronics
Deskripsyon : IGBT 600V 35A 125W D2PAK
Seri : PowerMESH™
Estati Pati : Obsolete
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 35A
Kouran - Pèseptè batman (Icm) : 75A
Vce (sou) (Max) @ Vge, Ic : 2.75V @ 15V, 12A
Pouvwa - Max : 125W
Oblije chanje enèji : 165µJ (on), 255µJ (off)
Kalite Antre : Standard
Gate chaje : 55nC
Td (on / off) @ 25 ° C : 30ns/105ns
Kondisyon egzamen an : 480V, 12A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK