Nexperia USA Inc. - PMV33UPE,215

KEY Part #: K6416149

PMV33UPE,215 Pricing (USD) [412096PC Stock]

  • 1 pcs$0.09020
  • 3,000 pcs$0.08975

Nimewo Pati:
PMV33UPE,215
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 20V 4.4A TO-236AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMV33UPE,215 Atribi pwodwi yo

Nimewo Pati : PMV33UPE,215
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 20V 4.4A TO-236AB
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 36 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 22.1nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1820pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 490mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB
Pake / Ka : TO-236-3, SC-59, SOT-23-3