IRFB812PBF Pricing (USD) [188931PC Stock]
- 1 pcs$0.19577
- 1,000 pcs$0.18794
- Nimewo Pati:
- IRFB812PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 500V 3.6A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Bridge rèktifikateur and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB812PBF electronic components. IRFB812PBF can be shipped within 24 hours after order. If you have any demands for IRFB812PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB812PBF Atribi pwodwi yo
Nimewo Pati :
IRFB812PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 500V 3.6A TO220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
810pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
78W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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