FQP70N10 Pricing (USD) [37709PC Stock]
- 1 pcs$1.00344
- 10 pcs$0.90728
- 100 pcs$0.72892
- 500 pcs$0.56694
- 1,000 pcs$0.46974
- Nimewo Pati:
- FQP70N10
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 57A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQP70N10 electronic components. FQP70N10 can be shipped within 24 hours after order. If you have any demands for FQP70N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP70N10 Atribi pwodwi yo
Nimewo Pati :
FQP70N10
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 57A TO-220
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
57A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
23 mOhm @ 28.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
3300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
160W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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