HGT1S10N120BNST Pricing (USD) [51869PC Stock]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Nimewo Pati:
- HGT1S10N120BNST
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 35A 298W TO263AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Atribi pwodwi yo
Nimewo Pati :
HGT1S10N120BNST
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 35A 298W TO263AB
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
35A
Kouran - Pèseptè batman (Icm) :
80A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Pouvwa - Max :
298W
Oblije chanje enèji :
320µJ (on), 800µJ (off)
Kalite Antre :
Standard
Gate chaje :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Kondisyon egzamen an :
960V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
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