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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CMLDM7120G TR

Central Semiconductor Corp - CMLDM7120G TR

KEY Part #: K6404898

CMLDM7120G TR Pricing (USD) [334003PC Stock]

  • 1 pcs$0.11944
  • 3,000 pcs$0.11885
Nimewo Pati:
CMLDM7120G TR
Manifakti:
Central Semiconductor Corp
Detaye deskripsyon:
MOSFET N-CH 20V 1A SOT563.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Central Semiconductor Corp CMLDM7120G TR electronic components. CMLDM7120G TR can be shipped within 24 hours after order. If you have any demands for CMLDM7120G TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CMLDM7120G TR Atribi pwodwi yo

Nimewo Pati : CMLDM7120G TR
Manifakti : Central Semiconductor Corp
Deskripsyon : MOSFET N-CH 20V 1A SOT563
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 2.4nC @ 4.5V
Vgs (Max) : 8V
Antre kapasite (Ciss) (Max) @ Vds : 220pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150mW (Ta)
Operating Tanperati : -65°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-563
Pake / Ka : SOT-563, SOT-666
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