Vishay Siliconix - SI4829DY-T1-E3

KEY Part #: K6392831

SI4829DY-T1-E3 Pricing (USD) [406296PC Stock]

  • 1 pcs$0.09149
  • 2,500 pcs$0.09104

Nimewo Pati:
SI4829DY-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 20V 2A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI4829DY-T1-E3 electronic components. SI4829DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4829DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4829DY-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI4829DY-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 2A 8-SOIC
Seri : LITTLE FOOT®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 215 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 210pF @ 10V
Karakteristik FET : Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) : 2W (Ta), 3.1W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)