Vishay Semiconductor Diodes Division - VS-GA300TD60S

KEY Part #: K6533219

VS-GA300TD60S Pricing (USD) [492PC Stock]

  • 1 pcs$94.35613
  • 12 pcs$77.39705

Nimewo Pati:
VS-GA300TD60S
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 600V 530A 1136W INT-A-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GA300TD60S electronic components. VS-GA300TD60S can be shipped within 24 hours after order. If you have any demands for VS-GA300TD60S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GA300TD60S Atribi pwodwi yo

Nimewo Pati : VS-GA300TD60S
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 600V 530A 1136W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 530A
Pouvwa - Max : 1136W
Vce (sou) (Max) @ Vge, Ic : 1.45V @ 15V, 300A
Kouran - Cutoff Pèseptè (Max) : 750µA
Antre kapasite (Cies) @ Vce : -
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Dual INT-A-PAK (3 + 8)
Pake Aparèy Founisè : Dual INT-A-PAK

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