Toshiba Semiconductor and Storage - TRS6E65C,S1AQ

KEY Part #: K6454663

TRS6E65C,S1AQ Pricing (USD) [15205PC Stock]

  • 1 pcs$2.86009
  • 50 pcs$2.84586

Nimewo Pati:
TRS6E65C,S1AQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE SCHOTTKY 650V 6A TO220-2L.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TRS6E65C,S1AQ electronic components. TRS6E65C,S1AQ can be shipped within 24 hours after order. If you have any demands for TRS6E65C,S1AQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TRS6E65C,S1AQ Atribi pwodwi yo

Nimewo Pati : TRS6E65C,S1AQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE SCHOTTKY 650V 6A TO220-2L
Seri : -
Estati Pati : Not For New Designs
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 6A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 6A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 90µA @ 650V
Kapasite @ Vr, F : 35pF @ 650V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220-2L
Operating Tanperati - Junction : 175°C (Max)

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