IXDH35N60BD1 Pricing (USD) [13619PC Stock]
- 1 pcs$3.18595
- 30 pcs$3.17010
- Nimewo Pati:
- IXDH35N60BD1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 60A 250W TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXDH35N60BD1 electronic components. IXDH35N60BD1 can be shipped within 24 hours after order. If you have any demands for IXDH35N60BD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXDH35N60BD1 Atribi pwodwi yo
Nimewo Pati :
IXDH35N60BD1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 60A 250W TO247AD
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
70A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 35A
Pouvwa - Max :
250W
Oblije chanje enèji :
1.6mJ (on), 800µJ (off)
Kalite Antre :
Standard
Gate chaje :
120nC
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
300V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
40ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3 Full Pack
Pake Aparèy Founisè :
TO-247AD (IXDH)
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