ON Semiconductor - HGT1S12N60A4DS

KEY Part #: K6424276

HGT1S12N60A4DS Pricing (USD) [28587PC Stock]

  • 1 pcs$1.44885
  • 800 pcs$1.44164

Nimewo Pati:
HGT1S12N60A4DS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 54A 167W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGT1S12N60A4DS electronic components. HGT1S12N60A4DS can be shipped within 24 hours after order. If you have any demands for HGT1S12N60A4DS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGT1S12N60A4DS Atribi pwodwi yo

Nimewo Pati : HGT1S12N60A4DS
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 54A 167W D2PAK
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 54A
Kouran - Pèseptè batman (Icm) : 96A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 12A
Pouvwa - Max : 167W
Oblije chanje enèji : 55µJ (on), 50µJ (off)
Kalite Antre : Standard
Gate chaje : 78nC
Td (on / off) @ 25 ° C : 17ns/96ns
Kondisyon egzamen an : 390V, 12A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 30ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB