Infineon Technologies - BSO040N03MSGXUMA1

KEY Part #: K6420195

BSO040N03MSGXUMA1 Pricing (USD) [169868PC Stock]

  • 1 pcs$0.21774
  • 2,500 pcs$0.15306

Nimewo Pati:
BSO040N03MSGXUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 16A 8DSO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO040N03MSGXUMA1 Atribi pwodwi yo

Nimewo Pati : BSO040N03MSGXUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 16A 8DSO
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 73nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5700pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.56W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-DSO-8
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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