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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. KGF12N05-400-SP

Renesas Electronics America Inc. - KGF12N05-400-SP

KEY Part #: K6403871

[2208PC Stock]

    Nimewo Pati:
    KGF12N05-400-SP
    Manifakti:
    Renesas Electronics America Inc.
    Detaye deskripsyon:
    IC MOSFET N-CH.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America Inc. KGF12N05-400-SP electronic components. KGF12N05-400-SP can be shipped within 24 hours after order. If you have any demands for KGF12N05-400-SP, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KGF12N05-400-SP Atribi pwodwi yo

    Nimewo Pati : KGF12N05-400-SP
    Manifakti : Renesas Electronics America Inc.
    Deskripsyon : IC MOSFET N-CH
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 5.5V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 3.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 2.4 mOhm @ 12A, 4.5V
    Vgs (th) (Max) @ Id : 800mV @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 3.5V
    Vgs (Max) : ±5.5V
    Antre kapasite (Ciss) (Max) @ Vds : 940pF @ 5.5V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-WLCSP (1.47x1.47)
    Pake / Ka : 6-SMD, No Lead
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