STMicroelectronics - STI16NM50N

KEY Part #: K6415612

[8333PC Stock]


    Nimewo Pati:
    STI16NM50N
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 500V 15A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - SCR, Diodes - RF, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STI16NM50N electronic components. STI16NM50N can be shipped within 24 hours after order. If you have any demands for STI16NM50N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STI16NM50N Atribi pwodwi yo

    Nimewo Pati : STI16NM50N
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 500V 15A I2PAK
    Seri : MDmesh™ II
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 260 mOhm @ 7.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 125W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA