Nimewo Pati :
SCT2750NYTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
1700V .75 OHM 6A SIC FET
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
975 mOhm @ 1.7A, 18V
Vgs (th) (Max) @ Id :
4V @ 630µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 18V
Antre kapasite (Ciss) (Max) @ Vds :
275pF @ 800V
Disipasyon Pouvwa (Max) :
57W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA