Rohm Semiconductor - SCT2750NYTB

KEY Part #: K6399984

SCT2750NYTB Pricing (USD) [21696PC Stock]

  • 1 pcs$2.10005
  • 400 pcs$2.08960

Nimewo Pati:
SCT2750NYTB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
1700V .75 OHM 6A SIC FET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor SCT2750NYTB electronic components. SCT2750NYTB can be shipped within 24 hours after order. If you have any demands for SCT2750NYTB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SCT2750NYTB Atribi pwodwi yo

Nimewo Pati : SCT2750NYTB
Manifakti : Rohm Semiconductor
Deskripsyon : 1700V .75 OHM 6A SIC FET
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 18V
RD sou (Max) @ Id, Vgs : 975 mOhm @ 1.7A, 18V
Vgs (th) (Max) @ Id : 4V @ 630µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 18V
Vgs (Max) : +22V, -6V
Antre kapasite (Ciss) (Max) @ Vds : 275pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 57W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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