ON Semiconductor - HGTP2N120CN

KEY Part #: K6424368

[9333PC Stock]


    Nimewo Pati:
    HGTP2N120CN
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    IGBT 1200V 13A 104W TO220AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Modil pouvwa chofè, Diodes - Zener - Single, Transistors - JFETs, Diodes - Rèkteur - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor HGTP2N120CN electronic components. HGTP2N120CN can be shipped within 24 hours after order. If you have any demands for HGTP2N120CN, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGTP2N120CN Atribi pwodwi yo

    Nimewo Pati : HGTP2N120CN
    Manifakti : ON Semiconductor
    Deskripsyon : IGBT 1200V 13A 104W TO220AB
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : NPT
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 13A
    Kouran - Pèseptè batman (Icm) : 20A
    Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 2.6A
    Pouvwa - Max : 104W
    Oblije chanje enèji : 96µJ (on), 355µJ (off)
    Kalite Antre : Standard
    Gate chaje : 30nC
    Td (on / off) @ 25 ° C : 25ns/205ns
    Kondisyon egzamen an : 960V, 2.6A, 51 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-220-3
    Pake Aparèy Founisè : TO-220-3