Nimewo Pati :
HGTP2N120CN
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 13A 104W TO220AB
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
13A
Kouran - Pèseptè batman (Icm) :
20A
Vce (sou) (Max) @ Vge, Ic :
2.4V @ 15V, 2.6A
Oblije chanje enèji :
96µJ (on), 355µJ (off)
Td (on / off) @ 25 ° C :
25ns/205ns
Kondisyon egzamen an :
960V, 2.6A, 51 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3