HGTG10N120BND Pricing (USD) [23675PC Stock]
- 1 pcs$1.63059
- 10 pcs$1.46268
- 100 pcs$1.19857
- 500 pcs$0.96799
- 1,000 pcs$0.81638
- Nimewo Pati:
- HGTG10N120BND
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 35A 298W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTG10N120BND electronic components. HGTG10N120BND can be shipped within 24 hours after order. If you have any demands for HGTG10N120BND, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG10N120BND Atribi pwodwi yo
Nimewo Pati :
HGTG10N120BND
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 35A 298W TO247
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
35A
Kouran - Pèseptè batman (Icm) :
80A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Pouvwa - Max :
298W
Oblije chanje enèji :
850µJ (on), 800µJ (off)
Kalite Antre :
Standard
Gate chaje :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Kondisyon egzamen an :
960V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
70ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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