Nimewo Pati :
SSM6K781G,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 12V 7A 6WCSP6C
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
18 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 6V
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WCSPC (1.5x1.0)
Pake / Ka :
6-UFBGA, WLCSP