Infineon Technologies - IRF9383MTR1PBF

KEY Part #: K6404258

[8727PC Stock]


    Nimewo Pati:
    IRF9383MTR1PBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 30V 22A DIRECTFET.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF9383MTR1PBF electronic components. IRF9383MTR1PBF can be shipped within 24 hours after order. If you have any demands for IRF9383MTR1PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF9383MTR1PBF Atribi pwodwi yo

    Nimewo Pati : IRF9383MTR1PBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 30V 22A DIRECTFET
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta), 160A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 2.9 mOhm @ 22A, 10V
    Vgs (th) (Max) @ Id : 2.4V @ 150µA
    Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 7305pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.1W (Ta), 113W (Tc)
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : DIRECTFET™ MX
    Pake / Ka : DirectFET™ Isometric MX

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