Vishay Siliconix - SI7904BDN-T1-GE3

KEY Part #: K6522091

SI7904BDN-T1-GE3 Pricing (USD) [178816PC Stock]

  • 1 pcs$0.20685
  • 3,000 pcs$0.17480

Nimewo Pati:
SI7904BDN-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 20V 6A PPAK 1212-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7904BDN-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7904BDN-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 20V 6A PPAK 1212-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A
RD sou (Max) @ Id, Vgs : 30 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 860pF @ 10V
Pouvwa - Max : 17.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® 1212-8 Dual
Pake Aparèy Founisè : PowerPAK® 1212-8 Dual