Infineon Technologies - IRG7PH35UD-EP

KEY Part #: K6422444

IRG7PH35UD-EP Pricing (USD) [16342PC Stock]

  • 1 pcs$2.77771
  • 25 pcs$2.76389

Nimewo Pati:
IRG7PH35UD-EP
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 50A COPAK247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG7PH35UD-EP Atribi pwodwi yo

Nimewo Pati : IRG7PH35UD-EP
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 50A COPAK247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 20A
Pouvwa - Max : 180W
Oblije chanje enèji : 1.06mJ (on), 620µJ (off)
Kalite Antre : Standard
Gate chaje : 85nC
Td (on / off) @ 25 ° C : 30ns/160ns
Kondisyon egzamen an : 600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 105ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AD