Manifakti :
IXYS Integrated Circuits Division
Deskripsyon :
MOSFET N-CH 800V SOT-23
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
0V
RD sou (Max) @ Id, Vgs :
380 Ohm @ 20mA, 0V
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
20pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
400mW (Ta)
Operating Tanperati :
-55°C ~ 110°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3