Vishay Semiconductor Diodes Division - BAV100-GS18

KEY Part #: K6458625

BAV100-GS18 Pricing (USD) [3225988PC Stock]

  • 1 pcs$0.01147
  • 10,000 pcs$0.01080

Nimewo Pati:
BAV100-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 50V 250MA SOD80. Diodes - General Purpose, Power, Switching 1.0 Amp 60V 500mW
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAV100-GS18 electronic components. BAV100-GS18 can be shipped within 24 hours after order. If you have any demands for BAV100-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV100-GS18 Atribi pwodwi yo

Nimewo Pati : BAV100-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 50V 250MA SOD80
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 50V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AC, MINI-MELF, SOD-80
Pake Aparèy Founisè : SOD-80 MiniMELF
Operating Tanperati - Junction : 175°C (Max)

Ou ka enterese tou
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode