IXDR35N60BD1 Pricing (USD) [11935PC Stock]
- 1 pcs$3.63550
- 30 pcs$3.61741
- Nimewo Pati:
- IXDR35N60BD1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 38A 125W ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXDR35N60BD1 electronic components. IXDR35N60BD1 can be shipped within 24 hours after order. If you have any demands for IXDR35N60BD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXDR35N60BD1 Atribi pwodwi yo
Nimewo Pati :
IXDR35N60BD1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 38A 125W ISOPLUS247
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
38A
Kouran - Pèseptè batman (Icm) :
48A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 35A
Pouvwa - Max :
125W
Oblije chanje enèji :
1.6mJ (on), 800µJ (off)
Kalite Antre :
Standard
Gate chaje :
140nC
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
300V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
40ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
ISOPLUS247™
Pake Aparèy Founisè :
ISOPLUS247™
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