AUIRFB4610 Pricing (USD) [52586PC Stock]
- 1 pcs$0.74354
- 1,000 pcs$0.68218
- Nimewo Pati:
- AUIRFB4610
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 73A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies AUIRFB4610 electronic components. AUIRFB4610 can be shipped within 24 hours after order. If you have any demands for AUIRFB4610, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRFB4610 Atribi pwodwi yo
Nimewo Pati :
AUIRFB4610
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 73A TO220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3550pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
190W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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